BFP182 datasheet pdf

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Updated

Oct 22, 2025, 03:25 PM

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BFP182 datasheet pdf

Datasheet Information

Pages: 7

≤ 69 °C P tot 250 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 325K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-12-1996 BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f T = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 182RGsQ62702-F13961 = C2 = E3 = B4 = ESOT-143 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 4 Total power dissipation T S

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