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BFP182 Aug-09-20011 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP182RGs1 = C2 = E3 = B4 = E SOT143 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 35mA Base current I B 4 Total power dissipation T S 69 °C 1) P tot 250mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 325 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance
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