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BFP183R Aug-09-20011 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA f T = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP183RRHs1 = E2 = C3 = E4 = B SOT143R Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 65mA Base current I B 5 Total power dissipation T S 76 °C 1) P tot 250mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 295 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance
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