BFP193 (1) datasheet pdf

2014-04-071 BFP193 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • f T = 8 GHz, NF min = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP193RCs 1 = C2 = E3 = B4 = E--SOT143 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 10 Total power dissipation 1)

Specifications

T S ≤ 72°C P tot 580mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 135 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)