≤
69 °C
P
tot
700
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
115K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-12-1996
BFP 196W
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
• Power amplifier for DECT and PCN systems
•
f
T
= 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFP 196WRIsQ62702-F15761 = E2 = C3 = E4 = BSOT-343
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
100mA
Base currentI
B
12
Total power dissipation
T
S