BFP196W (1) datasheet pdf

2014-04-041 BFP196W 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • f T = 7.5 GHz, NF min = 1.3 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP196WRIs 1 = E2 = C3 = E4 = B--SOT343 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 150mA Base currentI B 15 Total power dissipation 1)

Specifications

T S ≤ 69°C P tot 700mW Junction temperatureT J 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT Stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 115 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)