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BFP 405 Semiconductor Group Sep-09-19981 SIEGET 25 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding G ms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 405ALsQ62702-F15921 = B2 = E3 = C4 = ESOT-343 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO V4.5 V CBO 15Collector-base voltage V EBO Emitter-base voltage1.5 Collector current12mA I C I B 1Base current mW55 Total power dissipation, T S ≤ 120 °CP tot Junction temperature T j 150°C T A -65 ...+150Ambient temperature Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 530 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01
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