4.5
4.1
V
Collector-emitter voltageV
CES
15
Collector-base voltageV
CBO
15
Emitter-base voltageV
EBO
1.5
Collector currentI
C
25mA
Base currentI
B
3
Total power dissipation
1)
T
S
≤ 110 °C
P
tot
75mW
Junction temperatureT
J
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
Stg
-65 ... 150
1
T
S
is measured on the emitter lead at the soldering point to the pcb
Specifications
2013-09-191
BFP405
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For low current applications
• For oscillators up to 12 GHz
• Minimum noise figure NF
min
= 1.25 dB at 1.8 GHz
Outstanding G
ms
= 23 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP405ALs
1=B2=E3=C4=E--SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO