4.5
4.1
V
Collector-emitter voltageV
CES
15
Collector-base voltageV
CBO
15
Emitter-base voltageV
EBO
1.5
Collector currentI
C
25mA
Base currentI
B
3
Total power dissipation
1)
Specifications
2013-09-191
BFP405F
1
2
4
3
Low Noise Silicon Bipolar RF Transistor
• For low current applications
• Minimum noise figure NF
min
= 1.25 dB at 1.8 GHz
Outstanding G
ms
= 22.5 dB at 1.8 GHz
• Transition frequency f
T
= 25 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP405FALs
1=B2=E3=C4=E--TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO
T
S
≤ 112 °C
P
tot
75mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
1
T
S
is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
ParameterSymbolValueUnit
Junction - soldering point
1)
R
thJS
500
K/W