BFP405F datasheet pdf

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BFP405F datasheet pdf

Datasheet Information

Pages: 6

4.5 4.1 V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 1.5 Collector currentI C 25mA Base currentI B 3 Total power dissipation 1)

Specifications
2013-09-191 BFP405F 1 2 4 3 Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NF min = 1.25 dB at 1.8 GHz Outstanding G ms = 22.5 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP405FALs 1=B2=E3=C4=E--TSFP-4 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO

T S ≤ 112 °C P tot 75mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 1 T S is measured on the emitter lead at the soldering point to the pcb Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 1) R thJS 500 K/W