Loading PDF...
Pages: 8
BFP 420 Semiconductor Group Jul-14-19981 SIEGET 25 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding G ms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability • SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 420AMsQ62702-F15911 = B2 = E3 = C4 = ESOT-343 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO V4.5 V CBO 15Collector-base voltage V EBO Emitter-base voltage1.5 Collector current35mA I C I B 3Base current mW160 Total power dissipation, T S ≤ 107 °CP tot Junction temperature T j 150°C T A -65 ...+150Ambient temperature Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 270 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01