4.5
4.2
V
Collector-emitter voltageV
CES
15
Collector-base voltageV
CBO
15
Emitter-base voltageV
EBO
1.5
Collector currentI
C
70mA
Base currentI
B
7
Total power dissipation
1)
T
S
≤ 92°C
P
tot
230mW
Junction temperatureT
J
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
Stg
-65 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb
Specifications
2013-09-13
BFP460
1
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• General purpose low noise amplifier
for low voltage, low current applications
• High ESD robustness, typical 1500 V (HBM)
• Low minimum noise figure 1.1 dB at 1.8 GHz
• High linearity: output compression point
OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP460ABs
1 = E2 = C3 = E4=B--SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO