BFP460 datasheet pdf

2013-09-13 BFP460 1 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500 V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP460ABs 1 = E2 = C3 = E4=B--SOT343 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO