BFP460 datasheet pdf

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BFP460 datasheet pdf

Datasheet Information

Pages: 10

4.5 4.2 V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 1.5 Collector currentI C 70mA Base currentI B 7 Total power dissipation 1)

T S ≤ 92°C P tot 230mW Junction temperatureT J 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT Stg -65 ... 150 1 T S is measured on the collector lead at the soldering point to the pcb

Specifications
2013-09-13 BFP460 1 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500 V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP460ABs 1 = E2 = C3 = E4=B--SOT343 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO