BFP490 datasheet pdf

BFP 490 Semiconductor Group Sep-09-19981 SIEGET  25 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P -1dB = 26.5 dBm at 1.8 GHz maxim. available Gain G ma = 9.5 dB at 1.8 GHz • Transition frequency f T > 17 GHz • Gold metalization for high reliability • SIEGET  25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line VPW05980 1 2 3 5 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 490AOsQ62702-F17211 = B2 = E3 = C4 = CSCT-5955 = E Maximum Ratings ParameterSymbolUnitValue VCollector-emitter voltage4.5 V CEO Collector-base voltage V CBO 15 Emitter-base voltage V EBO 1.5 Collector current I C 600mA Base current I B 60 Total power dissipation, T S ≤ 85 °CP tot 1000mW Junction temperature T j 150°C Ambient temperature T A -65 ...+150 Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 65 K/W 1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm Semiconductor Group11998-11-01

Specifications