2.5
2.4
V
Collector-emitter voltageV
CES
10
Collector-base voltageV
CBO
10
Emitter-base voltageV
EBO
1
Collector currentI
C
50mA
Base currentI
B
5
Total power dissipation
1)
T
S
≤ 105 °C
P
tot
125mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
1
T
S
is measured on the emitter lead at the soldering point to pcb
Specifications
2015-10-121
BFP520
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite
receivers and oscillators up to 22 GHz
• High gain and low noise at high frequencies
due to high transit frequency f
T
= 45 GHz
• Easy to use Pb-free (RoHS compliant) and
halogen free industry standard package with
visible leads
• Qualification report according to AEC-Q101
available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP520APs
1=B2=E3=C4=E--SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO