2.5
2.4
V
Collector-emitter voltageV
CES
10
Collector-base voltageV
CBO
10
Emitter-base voltageV
EBO
1
Collector currentI
C
50mA
Base currentI
B
5
Total power dissipation
1)
Specifications
2013-09-191
BFP520F
1
2
4
3
Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
Outstanding G
ms = 22.5 dB at 1.8 GHz
Minimum noise figure NF
min
= 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz
• Transition frequency f
T
= 45 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP520FAPs
1=B2=E3=C4=E--TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO
T
S
≤ 98 °C
P
tot
120mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
1
T
S
is measured on the emitter lead at the soldering point to pcb
Thermal Resistance
ParameterSymbolValueUnit
Junction - soldering point
1)
R
thJS
430
K/W