BFP520F datasheet pdf

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BFP520F datasheet pdf

Datasheet Information

Pages: 6

2.5 2.4 V Collector-emitter voltageV CES 10 Collector-base voltageV CBO 10 Emitter-base voltageV EBO 1 Collector currentI C 50mA Base currentI B 5 Total power dissipation 1)

Specifications
2013-09-191 BFP520F 1 2 4 3 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding G ms = 22.5 dB at 1.8 GHz Minimum noise figure NF min = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP520FAPs 1=B2=E3=C4=E--TSFP-4 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO

T S ≤ 98 °C P tot 120mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 1 T S is measured on the emitter lead at the soldering point to pcb Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 1) R thJS 430 K/W