BFP540 datasheet pdf

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BFP540 datasheet pdf

Datasheet Information

Pages: 10

4.5 4 V Collector-emitter voltageV CES 14 Collector-base voltageV CBO 14 Emitter-base voltageV EBO 1 Collector currentI C 80mA Base currentI B 8 Total power dissipation 1)

T S ≤ 77°C P tot 250mW Junction temperatureT J 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT Stg -65 ... 150 1 T S is measured on the emitter lead at the soldering point to the pcb

Specifications
2013-09-201 BFP540 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding G ms = 21.5 dB at 1.8 GHz Minimum noise figure NF min = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP540ATs 1=B2=E3=C4=E--SOT343 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO