4.5
4
V
Collector-emitter voltageV
CES
14
Collector-base voltageV
CBO
14
Emitter-base voltageV
EBO
1
Collector currentI
C
80mA
Base currentI
B
8
Total power dissipation
1)
T
S
≤ 77°C
P
tot
250mW
Junction temperatureT
J
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
Stg
-65 ... 150
1
T
S
is measured on the emitter lead at the soldering point to the pcb
Specifications
2013-09-201
BFP540
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
• Outstanding G
ms
= 21.5 dB at 1.8 GHz
Minimum noise figure NF
min
= 0.9 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP540ATs
1=B2=E3=C4=E--SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO