BFP540F
Jan-28-2004
1
NPN Silicon RF Transistor
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding G
ms
= 20 dB
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET
Specifications
45 - Line
TSFP-4
1
2
4
3
XYs
ATs
1
2
3
4
direction of unreeling
top view
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP540FATs*
1=B2=E3=C4=E--TSFP-4
* Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltageV
CEO
4.5V
Collector-emitter voltageV
CES
14
Collector-base voltageV
CBO
14
Emitter-base voltageV
EBO
1
Collector currentI
C
80mA
Base currentI
B
8
Total power dissipation
1)
T
S
≤ 80°CP
tot
250mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
stg
-65 ... 150
Thermal Resistance
ParameterSymbolValueUnit
Junction - soldering point
2)
R
thJS
≤ 280
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance