BFP540F datasheet pdf

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BFP540F datasheet pdf

Datasheet Information

Pages: 6

BFP540F Jan-28-2004 1 NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET

Specifications
45 - Line TSFP-4 1 2 4 3 XYs ATs 1 2 3 4 direction of unreeling top view ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP540FATs* 1=B2=E3=C4=E--TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 4.5V Collector-emitter voltageV CES 14 Collector-base voltageV CBO 14 Emitter-base voltageV EBO 1 Collector currentI C 80mA Base currentI B 8 Total power dissipation 1) T S ≤ 80°CP tot 250mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS ≤ 280 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance