BFP620F datasheet pdf

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BFP620F datasheet pdf

Datasheet Information

Pages: 9

2.3 2.1 V Collector-emitter voltageV CES 7.5 Collector-base voltageV CBO 7.5 Emitter-base voltageV EBO 1.2 Collector currentI C 80mA Base currentI B 3 Total power dissipation 1)

T S ≤ 96°C P tot 185mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 1 T S is measured on the emitter lead at the soldering point to the pcb

Specifications
2013-09-091 BFP620F 1 2 4 3 Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Outstanding noise figure NF min = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz • Maximum stable gain G ms = 21 dB at 1.8 GHz G ma = 10 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads • Qualification report according to AEC-Q101 available 1 34 2 Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP620FR2s 1=B2=E3=C4=E--TSFP-4 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO