2.3
2.1
V
Collector-emitter voltageV
CES
7.5
Collector-base voltageV
CBO
7.5
Emitter-base voltageV
EBO
1.2
Collector currentI
C
80mA
Base currentI
B
3
Total power dissipation
1)
T
S
≤ 96°C
P
tot
185mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
1
T
S
is measured on the emitter lead at the soldering point to the pcb
Specifications
2013-09-091
BFP620F
1
2
4
3
Low Noise SiGe:C Bipolar RF Transistor
• High gain low noise RF transistor
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Outstanding noise figure NF
min
= 0.7 dB at 1.8 GHz
Outstanding noise figure NF
min
= 1.3 dB at 6 GHz
• Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
1
34
2
Direction of Unreeling
Top View
XYs
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFP620FR2s
1=B2=E3=C4=E--TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO