BFP620F datasheet pdf

2013-09-091 BFP620F 1 2 4 3 Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Outstanding noise figure NF min = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz • Maximum stable gain G ms = 21 dB at 1.8 GHz G ma = 10 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads • Qualification report according to AEC-Q101 available 1 34 2 Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP620FR2s 1=B2=E3=C4=E--TSFP-4 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO