≤
73 °C
P
tot
280
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 275K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-11-1996
BFP 81
NPN Silicon RF Transistor
• For low-noise amplifiers up to 2GHz
at collector currents from 0.5 mA to 20 mA.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFP 81FAsQ62702-F16111 = C2 = E3 = B 4 = ESOT-143
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
16V
Collector-emitter voltageV
CES
25
Collector-base voltageV
CBO
25
Emitter-base voltageV
EBO
2
Collector currentI
C
30mA
Base currentI
B
4
Total power dissipation
T
S