BFP81 (1) datasheet pdf

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BFP81 (1) datasheet pdf

Datasheet Information

Pages: 7

≤ 73 °C P tot 280 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 275K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-11-1996 BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 81FAsQ62702-F16111 = C2 = E3 = B 4 = ESOT-143 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 16V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 30mA Base currentI B 4 Total power dissipation T S