BFP92 datasheet pdf

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BFP92 datasheet pdf

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BFP92A/BFP92AW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (10) Document Number 85019 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features DHigh power gain DLow noise figure DHigh transition frequency 13 579 21 43 94 9279 BFP92A Marking: 92V Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 3 13 653 4 13 566 BFP92AW Marking: W92 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 15V Emitter-base voltageV EBO 2V Collector currentI C 30mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W

Specifications
BFP92A/BFP92AW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (10) Document Number 85019 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features DHigh power gain DLow noise figure DHigh transition frequency 13 579 21 43 94 9279 BFP92A Marking: 92V Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 3 13 653 4 13 566 BFP92AW Marking: W92 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 15V Emitter-base voltageV EBO 2V Collector currentI C 30mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W