BFP93AW datasheet pdf

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Oct 22, 2025, 03:25 PM

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BFP93AW datasheet pdf

Datasheet Information

Pages: 10

BFP93A/BFP93AW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20–Jan-99 1 (10) Document Number 85020 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features DHigh power gain DLow noise figure DHigh transition frequency 13 579 21 43 94 9279 BFP93A Marking: FE Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 3 13 653 4 13 566 BFP93AW Marking: WFE Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 12V Emitter-base voltageV EBO 2V Collector currentI C 50mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W

Specifications
BFP93A/BFP93AW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20–Jan-99 1 (10) Document Number 85020 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features DHigh power gain DLow noise figure DHigh transition frequency 13 579 21 43 94 9279 BFP93A Marking: FE Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 3 13 653 4 13 566 BFP93AW Marking: WFE Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 12V Emitter-base voltageV EBO 2V Collector currentI C 50mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W

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