≤
93 °C
P
tot
600
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
95K/W
Specifications
Semiconductor Group1Dec-13-1996
BFQ 193
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
•
f
T
= 7.5 GHz
F = 1.3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFQ 193RCsQ62702-F13121 = B2 = C3 = E SOT-89
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
80mA
Base currentI
B
10
Total power dissipation
T
S