BFQ193 datasheet pdf

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Oct 22, 2025, 03:25 PM

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BFQ193 datasheet pdf

Datasheet Information

Pages: 4

≤ 93 °C P tot 600 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 95K/W

Specifications
Semiconductor Group1Dec-13-1996 BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f T = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFQ 193RCsQ62702-F13121 = B2 = C3 = E SOT-89 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 10 Total power dissipation T S
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