≤
85 °C
P
tot
1
W
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 65K/W
Specifications
Semiconductor Group1Dec-16-1996
BFQ 19S
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
MarkingOrdering CodePin ConfigurationPackage
BFQ 19SFGsQ62702-F10881 = B2 = C3 = E SOT-89
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
3
Collector currentI
C
75mA
Base currentI
B
12
Total power dissipation
T
S