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SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS BFQ31A – S4 BFQ31AR – S5 ABSOLUTE MAXIMUM RATINGS. PARAMETERSYMBOLVALUEUNIT Collector-Base VoltageV CBO 30V Collector-Emitter VoltageV CEO 15V Emitter-Base VoltageV EBO 3V Continuous Collector CurrentI C 100mA Base CurrentI B 50mA Power Dissipation at T amb =25°CP tot 330mW Operating and Storage Temperature RangeT j :T stg -55 to +150°C ELECTRICAL CHARACTERISTICS (at T amb = 25°C). PARAMETERSYMBOLBFQ31AUNIT CONDITIONS. MIN.MAX. Collector-Base Breakdown Voltage V (BR)CBO 30V I C =1.0μA, I E =0 Collector-Emitter Breakdown Voltage V (BR)CEO 15VI C =3mA, I B =0* Emitter-Base Breakdown Voltage V (BR)EBO 3V I E =10μA, I C =0 Collector Cut-Off Current I CBO 0.01 μA V CB =15V, I E =0 Collector-Emitter Saturation Voltage V CE(sat) 0.4VI C =10mA, I B =1mA Base-Emitter Saturation Voltage V BE(sat) 1.0VI C =10mA, I B =1mA Static Forward Current Transfer Ratio h FE 100I C =3mA, V CE =1V Transition Frequency f T 600MHzI C =4mA, V CE =10V f=100MHz Output CapacitanceC obo 1.7pFV CB =10V, f=1MHz Input CapacitanceC ibo 2.0pFV CB =0.5V, f=1MHz Noise FigureN6.0dBI C =1mA, V CE =6V R s =400Ω, f=60MHz *Measured under pulsed conditions. Spice parameter data is available upon request for this device BFQ31A C B E TBA