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NPN Silicon RF Transistor BFQ 71 ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BFQ 71Q62702-F77571Cerec-X 123 BEC 4 E ParameterSymbolValuesUnit Collector-emitter voltageV CE015V Emitter-base voltageVEB02.5 Collector currentI C30mA Collector-base voltageV CB020 Base currentIB4 Junction temperatureTj175 ̊C Ambient temperature rangeT A– 65 ... + 175 Total power dissipation,T S≤103 ̊C 3) Ptot300mW Storage temperature rangeT stg– 65 ... + 175 Thermal Resistance Junction - ambient 2) Rth JA≤ 320K/W Junction - soldering point 3) Rth JS≤ 240 Collector-emitter voltage,VBE = 0VCES20 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. lHermetically sealed ceramic package. lHiRel/Mil screening available. lCECC-type available: CECC 50002/260.