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NPN Silicon RF Transistor BFQ 74 ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeMarking Package 1) Pin Configuration BFQ 74Q62702-F78874Cerec-X 1234 BECE Ordering Code (tape and reel) ParameterSymbolValuesUnit Collector-emitter voltageV CE016V Emitter-base voltageVEB02 Collector currentI C35mA Collector-base voltageV CB025 Base currentIB5 Junction temperatureTj175 ̊C Ambient temperature rangeT A– 65 ... + 175 Total power dissipation,T S≤115 ̊C 3) Ptot300mW Storage temperature rangeT stg– 65 ... + 175 Thermal Resistance Junction - ambient 2) Rth JA≤ 280K/W Junction - soldering point 3) Rth JS≤ 200 Collector-emitter voltage,VBE = 0VCES25 Peak collector current,f≥10 MHzICM45 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. lHermetically sealed ceramic package. lHiRel/Mil screening available.