BFQ81 datasheet pdf

BFQ81 datasheet pdf PDF Viewer

Loading PDF...

BFQ81 datasheet pdf

Datasheet Information

Pages: 7

≤ 59 °C P tot 280 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 325K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-12-1996 BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFQ 81RAsQ62702-F10491 = B2 = E3 = C SOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 16V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 30mA Base currentI B 4 Total power dissipation T S