≤
73 °C
P
tot
700
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 110K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-11-1996
BFR 106
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers
• For linear broadband amplifiers
• Special application: antenna amplifiers
• Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFR 106R7sQ62702-F12191 = B2 = E3 = C 4 = ESOT-23
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
3
Collector currentI
C
100mA
Base currentI
B
12
Total power dissipation
T
S