BFR106 (1) datasheet pdf

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BFR106 (1) datasheet pdf

Datasheet Information

Pages: 7

≤ 73 °C P tot 700 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 110K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-11-1996 BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFR 106R7sQ62702-F12191 = B2 = E3 = C 4 = ESOT-23 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 3 Collector currentI C 100mA Base currentI B 12 Total power dissipation T S