16
15
V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
3
Collector currentI
C
210mA
Base currentI
B
21
Total power dissipation
1)
Specifications
2013-11-21
1
BFR106
Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor
• 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
• For UHF / VHF applications
• Driver for multistage amplifiers
• For linear broadband and antenna amplifiers
• Collector design supports 5 V supply voltage
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFR106R7s
1=B2=E3=C
SOT23
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage,
T
A
= 25°C
T
A
= -55°C
V
CEO
T
S
≤ 76 °C
P
tot
700mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
Thermal Resistance
ParameterSymbolValueUnit
Junction - soldering point
2)
R
thJS
105K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
t
hJS
please refer to Application Note AN077 (Thermal Resistance Calculation)