BFR106 (2) datasheet pdf

2013-11-21 1 BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR106R7s 1=B2=E3=C SOT23 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage, T A = 25°C T A = -55°C V CEO