BFR180 datasheet pdf

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BFR180 datasheet pdf

Datasheet Information

Pages: 7

≤ 127 °C P tot 30 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 780K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Feb-04-1997 BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • f T = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFR 180RDsQ62702-F12961 = B2 = E3 = C SOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 8V Collector-emitter voltageV CES 10 Collector-base voltageV CBO 10 Emitter-base voltageV EBO 2 Collector currentI C 4mA Base currentI B 0.5 Total power dissipation T S