≤
127 °C
P
tot
30
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
780K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Feb-04-1997
BFR 180
NPN Silicon RF Transistor
• For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2mA to 2.5mA
•
f
T
= 7GHz
F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFR 180RDsQ62702-F12961 = B2 = E3 = C SOT-23
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
8V
Collector-emitter voltageV
CES
10
Collector-base voltageV
CBO
10
Emitter-base voltageV
EBO
2
Collector currentI
C
4mA
Base currentI
B
0.5
Total power dissipation
T
S