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BFR181T/BFR181TW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 20-Jan-99 1 (4) Document Number 85024 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features DLow noise figure DHigh power gain 13 581 23 1 94 9280 BFR181T Marking: RF Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 2 1 3 13 652 13 570 BFR181TW Marking: WRF Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 15V Collector-emitter voltageV CEO 10V Emitter-base voltageV EBO 2V Collector currentI C 20mA Base currentI B 2mA Total power dissipationT amb ≤ 78 °CP tot 160mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W