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BFR181T Aug-09-20011 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA f T = 8 GHz F = 1.45 dB at 900 MHz VPS05996 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR181TRFs1 = B2 = E3 = CSC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 20mA Base currentI B 2 Total power dissipation T S 79°C 1) P tot 175mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 405 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance