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BFR182T/BFR182TW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 20-Jan-99 1 (4) Document Number 85025 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features DLow noise figure DHigh power gain 13 581 23 1 94 9280 BFR182T Marking: RG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 2 1 3 13 652 13 570 BFR182TW Marking: WRG Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 15V Collector-emitter voltageV CEO 10V Emitter-base voltageV EBO 2V Collector currentI C 35mA Base currentI B 5mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W