≤
60 °C
P
tot
450
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 200K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-11-1996
BFR 183
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector current from 2 mA to 30mA
•
f
T
= 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFR 183RHsQ62702-F13161 = B2 = E3 = C SOT-23
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
65mA
Base currentI
B
5
Total power dissipation
T
S