BFR183 datasheet pdf

BFR183 datasheet pdf PDF Viewer

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BFR183 datasheet pdf

Datasheet Information

Pages: 7

≤ 60 °C P tot 450 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 200K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-11-1996 BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f T = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFR 183RHsQ62702-F13161 = B2 = E3 = C SOT-23 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 65mA Base currentI B 5 Total power dissipation T S