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BFR193T/BFR193TW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 14-Feb-00 1 (4) Document Number Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features DLow noise figure DHigh transition frequency f T = 8 GHz DExcellent large-signal behaviour 13 581 23 1 94 9280 BFR193T Marking: RC Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 2 1 3 13 652 13 570 BFR193TW Marking: WRC Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 12V Emitter-base voltageV EBO 2V Collector currentI C 80mA Total power dissipationT amb ≤ 45 °CP tot 420mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambientmounted on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 250K/W
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