≤
73 °C
P
tot
700
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
110K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-13-1996
BFR 194
PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
• Complementary type: BFR 106 (NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFR 194RKsQ62702-F13461 = B2 = E3 = C SOT-23
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
3
Collector currentI
C
100mA
Base currentI
B
10
Total power dissipation
T
S