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Semiconductor Group1Dec-11-1996 BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • f T = 7.5GHz
≤ 115 °C P tot 80 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 435K/W 1) T S is measured on the collector lead at the soldering point to the pcb.