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BFR280W Jun-27-20011 NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7.5 GHz F = 1.5 dB at 900 MHz 1 3 VSO05561 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR280WREs1 = B2 = E3 = CSOT323 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltageV CEO 8V Collector-emitter voltageV CES 10 Collector-base voltageV CBO 10 Emitter-base voltageV EBO 2 Collector currentI C 10mA Base currentI B 1.2 Total power dissipation T S = 115 °C 1) P tot 80mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 435 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance
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