1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Specifications
JFET Amplifiers
N–Channel
MAXIMUM RATINGS
RatingSymbolValueUnit
Drain – Source VoltageV
DS
25Vdc
Gate – Source VoltageV
GS
25Vdc
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Total Device Dissipation
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
qJA
556°C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient
R
qJA
417°C/W
Junction and Storage TemperatureT
J
, T
stg
– 55 to +150°C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
SymbolMinMaxUnit
OFF CHARACTERISTICS
Gate Reverse Current(V
GS
= 10 Vdc, V
DS
= 0)I
GSS
—0.2nAdc
Gate Source Cutoff Voltage(I
D
= 0.5 nAdc, V
DS
= 10 Vdc)BFR30
BFR31
V
GS(OFF)
—
—
5.0
2.5
Vdc
Gate Source Voltage(I
D
= 1.0 mAdc, V
DS
= 10 Vdc)BFR30
BFR31
(I
D
= 50 mAdc, V
DS
= 10 Vdc)BFR30
BFR31
V
GS
– 0.7
—
—
—
– 3.0
– 1.3
– 4.0
– 2.0
Vdc
1.Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Order this document
by BFR30LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BFR30LT1
BFR31LT1
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
1
2
3
Motorola, Inc. 1996
1 DRAIN
2 SOURCE
3
GATE