BFR31LT1 datasheet pdf

JFET Amplifiers N–Channel MAXIMUM RATINGS RatingSymbolValueUnit Drain – Source VoltageV DS 25Vdc Gate – Source VoltageV GS 25Vdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient R qJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance Junction to Ambient R qJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Gate Reverse Current(V GS = 10 Vdc, V DS = 0)I GSS —0.2nAdc Gate Source Cutoff Voltage(I D = 0.5 nAdc, V DS = 10 Vdc)BFR30 BFR31 V GS(OFF) — — 5.0 2.5 Vdc Gate Source Voltage(I D = 1.0 mAdc, V DS = 10 Vdc)BFR30 BFR31 (I D = 50 mAdc, V DS = 10 Vdc)BFR30 BFR31 V GS – 0.7 — — — – 3.0 – 1.3 – 4.0 – 2.0 Vdc 1.Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a registered trademark of the Berquist Company. Order this document by BFR30LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR30LT1 BFR31LT1 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) 1 2 3  Motorola, Inc. 1996 1 DRAIN 2 SOURCE 3 GATE