BFR340F datasheet pdf

2013-11-06 1 BFR340F 3 1 2 Low Noise Silicon Bipolar RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5 V,1.9 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.2 x 1.2 mm 2 ) with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR340FFAs 1 = B2 = E3 = C TSFP-3 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 20mA Base currentI B 2 Total power dissipation 1)

Specifications

T S ≤ 110°C P tot 75mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS 530 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)