BFR340L3 datasheet pdf

2013-09-03 1 BFR340L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • Transition frequency of 14 GHz • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR340L3FA 1 = B2 = E3 = C TSLP-3-1 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 10mA Base currentI B 2 Total power dissipation 1)

Specifications

T S ≤ 120°C P tot 60mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 500 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)