BFR35AP datasheet pdf

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Oct 22, 2025, 03:25 PM

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BFR35AP datasheet pdf

Datasheet Information

Pages: 3

≤ 48 °C P tot 280 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 365K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-12-1996 BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFR 35APGEsQ62702-F9381 = B2 = E3 = CSOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2.5 Collector currentI C 30mA Base currentI B 4 Total power dissipation T S
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