≤
48 °C
P
tot
280
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
365K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-12-1996
BFR 35AP
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFR 35APGEsQ62702-F9381 = B2 = E3 = CSOT-23
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2.5
Collector currentI
C
30mA
Base currentI
B
4
Total power dissipation
T
S