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Jun-16-2003 1 BFR360F 1 2 3 NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR360FFBs 1 = B2 = E3 = C TSFP-3 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 4 Total power dissipation 1)
T S 98°C P tot 210mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS 250 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance