BFR360L3 datasheet pdf

2013-09-03 1 BFR360L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR360L3FB 1 = B2 = E3 = C TSLP-3-1 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 4 Total power dissipation 1)

Specifications

T S ≤ 104°C P tot 210mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 220 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)