BFR380L3 datasheet pdf

2013-08-29 1 BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR380L3FC 1 = B2 = E3 = C TSLP-3-1 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 14 Total power dissipation 1)

Specifications

T S ≤ 96°C P tot 380mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 140 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)