BFR460L3 datasheet pdf

2013-09-13 1 BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V (HBM) • High f T of 22 GHz • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR460L3AB 1 = B2 = E3 = C TSLP-3-1 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO