BFR460L3 datasheet pdf

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BFR460L3 datasheet pdf

Datasheet Information

Pages: 8

4.5 4.2 V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 1.5 Collector currentI C 50mA Base currentI B 5 Total power dissipation 1)

T S ≤ 108°C P tot 200mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 1 T S is measured on the collector lead at the soldering point to the pcb

Specifications
2013-09-13 1 BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V (HBM) • High f T of 22 GHz • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR460L3AB 1 = B2 = E3 = C TSLP-3-1 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO