4.5
4.2
V
Collector-emitter voltageV
CES
15
Collector-base voltageV
CBO
15
Emitter-base voltageV
EBO
1.5
Collector currentI
C
50mA
Base currentI
B
5
Total power dissipation
1)
T
S
≤ 108°C
P
tot
200mW
Junction temperatureT
J
150°C
Storage temperatureT
Stg
-55 ... 150
1
T
S
is measured on the collector lead at the soldering point to the pcb
Specifications
2013-09-13
1
BFR460L3
Low Noise Silicon Bipolar RF Transistor
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value 1500V (HBM)
• High f
T
of 22 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BFR460L3AB
1 = B2 = E3 = C
TSLP-3-1
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
ParameterSymbolValueUnit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
CEO