1. Product profile
1.1 General description
The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Applications
RF front end wideband applications in the GHz range
Analog and digital cellular telephones
Cordless telephones (CT1, CT2, DECT, etc.)
Radar detectors
Satellite TV tuners (SATV)
MATV/CATV amplifiers
Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Features
- 1. Product profile
- 1.1 General description
- 1.2 Features and benefits
- 1.3 Applications
- 1.4 Quick reference data
Specifications
BFR540
NPN 9 GHz wideband transistor
Rev. 6 — 13 September 2011Product data sheet
SOT23
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
CBO
collector-base voltageopen emitter--20V
V
CES
collector-emitter
voltage
R
BE
=0--15V
I
C
collector current (DC)--120mA
P
tot
total power dissipationT
sp
70C
[1]
--500mW
h
FE
DC current gainI
C
=40mA; V
CE
= 8 V100120250
C
re
feedback capacitanceI
C
=i
c
=0A; V
CB
=8V;
f=1MHz
-0.6-pF
f
T
transition frequencyI
C
=40mA; V
CE
=8V;
f=1GHz
-9-GHz
G
UM
maximum unilateral
power gain
I
C
=40mA; V
CE
=8V;
T
amb
=25C
f=900MHz-14-dB
f=2GHz-7-dB