BFR65 datasheet pdf

T C = 25 O C SYMBOLTEST CONDITIONSMINIMUM TYPICAL MAXIMUMUNITS BV CEO I C = 5.0 mA25 V BV CER I C = 5.0 mA R BE = 10 Ω 40 V BV CBO I C = 1.0 mA40 V BV EBO I E = 1.0 mA3.5 V I CBO V CB = 20 V100 μ μμ μ A h FE V CE = 20 V I C = 200 mA I C = 400 mA 30 20 --- V CE(SAT ) I C = 200 mA I B = 20 mA0.75 V C ob V CB = 20 V f = 1.0 MHz10 pF f t V CE = 20 V I C = 200 mA f = 500 MHz V CE = 20 V I C = 400 mA f = 500 MHz 1.2 1.0 GHz G P V CE = 20 V I C = 200 mA f = 200 MHz f = 800 MHz 1519 4.5 dB P o V CE = 20 V I C = 200 mA f = 200 MHz450 mW NPN SILICON RF POWER TRANSISTOR BFR65 DESCRIPTION: The ASI BRF65 is Designed for 20 V Large-Signal RF Amplifier Applications. MAXIMUM RATINGS I C 400 mA 1.0 A (PEAK) f = ≥ 1.0 MHz V CE 25 V V CB 40 V P DISS 5.0 W @ T mb = 125 O C f = ≥ 1.0 MHz T J -65 O C to +200 O C T STG -65 O C to +200 O C θ θθ θ JC 15 O C/W PACKAGE STYLE SOT- 48 ALL DIMENSIONS IN MM 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE

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