BFR90A datasheet pdf

BFR90A TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (6) Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features DHigh power gain DLow noise figure DHigh transition frequency 1 3 2 94 9308 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings ParametersSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 15V Emitter-base voltageV EBO 2V Collector currentI C 30mA Total power dissipationT amb

Specifications

≤60°CP tot 300mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance ParametersSymbolValueUnit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 mm CuR thJA 300K/W