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MSC1308.PDF 10-25-99 BFR91 DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) SymbolParameterValueUnit V CEO Collector-Emitter Voltage12Vdc V CBO Collector-Base Voltage15Vdc V EBO Emitter-Base Voltage3.0Vdc I C Collector Current35mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 mWatts mW/ ºC Tstg Storage Temperature -65 to +150ºC R θJA Total Device Dissipation @ TA = 60ºC Derate above 60ºC500ºC/W Macro T (STYLE #2) Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz • High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
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