BFR92 (1) datasheet pdf

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BFR92 (1) datasheet pdf

Datasheet Information

Pages: 9

BFR92/BFR92R Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (9) Document Number 85032 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features DHigh power gain DLow noise figure DHigh transition frequency 13 581 23 1 94 9280 BFR92 Marking: P1 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 581 23 1 9510527 BFR92R Marking: P4 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 15V Emitter-base voltageV EBO 2V Collector currentI C 30mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W

Specifications
BFR92/BFR92R Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (9) Document Number 85032 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features DHigh power gain DLow noise figure DHigh transition frequency 13 581 23 1 94 9280 BFR92 Marking: P1 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 581 23 1 9510527 BFR92R Marking: P4 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 15V Emitter-base voltageV EBO 2V Collector currentI C 30mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W